Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon

It is shown that the representation of neutron-irradiation-produced defects in the form of divacancy D clusters with a tetravacancy core adequately describes the observed neutron-irradiation-produced effects in float-zone silicon. It is also predicted that the complete-depletion voltage decreases for a dopant concentration exceeding a critical value; this decrease is due to "contraction" of the outer region of the cluster's space charge. The magnitude of the expected effect is determined by the factor similar to[1 - (r(n)/r(cl))(3)](-1), where r(n) and r(cl) are the radii of the core and cluster, respectively. (C) 2002 MAIK "Nauka / Interperiodica".