Effect of the geometric shape of nanostructures formed on Cu oxide thin films by the stress-induced migration on electrical characteristics

被引：7

作者：

Kimura, Yoshinari ^{[1
]}

Tohmyoh, Hironori ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Finemech, Aoba Ku, 6-6-01 Aoba, Sendai, Miyagi 9808579, Japan

来源：

SCRIPTA MATERIALIA | 2022年 / 210卷

关键词：

Nanostructure; Electrical resistivity; Copper; Semiconductor devices; Stress-induced migration; GROWTH; SEMICONDUCTORS; OXIDATION; SURFACES;

D O I：

10.1016/j.scriptamat.2021.114469

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical characteristics of Cu oxide thin films with different nanostructures were investigated for gas sensor applications. Nanowires and hillocks were formed on the Cu oxide thin films by the stress-induced migration, and the current-voltage characteristics of these films were measured. They showed a combination of ohmic and space-charge-limited conduction. The sheet resistance calculated from the voltage range of ohmic conduction changed in a wide range from 2.1 x 10(3) to 1.4 x 10(7) Omega/sq. Despite the different nanostructures on the films, the sheet resistance was proportional to their volume. Moreover, the temperature dependence of the current-voltage characteristics of the film was examined. The results indicated that the geometric shape of nanostructures on the Cu oxide thin film has a significant effect on electrical characteristics. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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页数：5

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