A 2.4 GHz Fully Integrated Linear CMOS Power Amplifier With Discrete Power Control

被引：54

作者：

An, Kyu Hwan ^{[1
]}

Lee, Dong Ho ^{[1
]}

Lee, Ockgoo ^{[1
]}

Kim, Hyungwook ^{[1
]}

Han, Jeonghu ^{[1
]}

Kim, Woonyun ^{[1
]}

Lee, Chang-Ho ^{[2
]}

Kim, Haksun ^{[3
]}

Laskar, Joy ^{[1
]}

机构：

[1] Georgia Inst Technol, Georgia Elect Design Ctr, Atlanta, GA 30308 USA

[2] Samsung Design Ctr, Atlanta, GA 30308 USA

[3] Samsung Electromech, Suwon 443803, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 07期

关键词：

Bias control; CMOS; discrete power control; power amplifier; power combining; transformer; PARALLEL AMPLIFICATION;

D O I：

10.1109/LMWC.2009.2022141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 2.4 GHz CMOS power amplifier (PA) in a standard 0.18 mu m CMOS process is presented. Using a parallel-combining transformer (PCT) and gate bias adaptation, a discrete power control of the PA is achieved for enhancing the efficiency at power back-off. With a 3.3 V power supply, the PA has a peak drain efficiency of 33% at 31 dBm peak output power. By applying discrete power control, a reduction of 650 mA in current consumption can be achieved over the low output power range while satisfying the EVM requirements of WLAN 802.11g and WiMAX 801.16e signals.

引用

页码：479 / 481

页数：3

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