Ultrafast carrier dynamics and intervalley scattering in ZnSe

被引:14
|
作者
Dougherty, DJ
Fleischer, SB
Warlick, EL
House, JL
Petrich, GS
Kolodziejski, LA
Ippen, EP
机构
[1] Research Laboratory of Electronics, Massachussets Inst. of Technology, Cambridge
关键词
D O I
10.1063/1.120271
中图分类号
O59 [应用物理学];
学科分类号
摘要
Intraband carrier dynamics were measured in ZnSe films by a two-wavelength pump probe technique with 180 fs resolution. A below-band pump pulse was used to heat carrier distributions in N-type samples by free carrier absorption. The electron cooling time constant was observed to be 500 fs. Intervalley scattering was seen to play a significant role in the electron dynamics and the scattering time from the L back to the Gamma valley was measured to be 1.8 ps. By examining the ratio of the intervalley component to the total response as a function of pump photon energy, the bottom of the L valley was determined to lie 1.30 eV above the Gamma-valley minimum. (C) 1997 American Institute of Physics.
引用
收藏
页码:3144 / 3146
页数:3
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