The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOIN-MOSFETs at cryogenic temperatures

被引：1
|
作者：
Dieudonné, F
Jomaah, J
Raynaud, C
Balestra, F
机构：
[1] ENSERG, IMEP, F-38016 Grenoble 1, France
[2] CEA, LETI, F-38054 Grenoble, France
来源：
JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期
关键词：
D O I：
10.1051/jp420020027
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Hot-carrier effects were studied in body-tied Partially Depleted SOI MOSFETs in a wide range of temperature, from 300 K down to 20 K. Devices under experimental tests were 0.25 mum long N-MOSFETs with a 10mum width. In this paper, the role of externally applied body-bias on the hat-carrier induced degradation is further investigated for five different temperatures. Our devices underwent accelerated electrical stress applying different negative body-biases as well as drain and front gate biases chosen to obtain reasonable stress duration. The variations of the main electrical parameters such as the maximal transconductance, the driving current or the threshold voltage are reported.
引用
收藏
页码：11 / 14
页数：4
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