Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy

被引：69

作者：

Wu, Jiang ^{[1
]}

Li, Zhenhua ^{[2
]}

Shao, Dali ^{[1
]}

Manasreh, M. O. ^{[1
,2
]}

Kunets, Vasyl P. ^{[2
]}

Wang, Zhiming M. ^{[2
]}

Salamo, Gregory J. ^{[2
]}

Weaver, B. D. ^{[3
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[2] Inst Nanoscale Sci & Engn, Fayetteville, AR 72701 USA

[3] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期

关键词：

gallium arsenide; III-V semiconductors; photodetectors; INFRARED PHOTODETECTORS; TEMPERATURE OPERATION; DOTS; PHOTORESPONSE; INGAAS;

D O I：

10.1063/1.3126644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoresponse from multicolor photodetector was measured in the spectral range of 0.4-6.0 mu m as a function of temperature and bias voltage. Devices were fabricated from wafers with an active region of five periods of GaAs quantum rings grown by droplet epitaxy technique on lattice matched Al0.3Ga0.7As barriers. The photoresponse spectra exhibit two broad bands in the visible-near-infrared and midinfrared spectral regions. The visible-near-infrared band, which is due to interband transitions, was observed at temperatures as high as room temperature. On the other hand, the midinfrared band, which is due to intersubband transitions, was observed at temperature lower than 80 K.

引用

页数：3

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