24•5% efficiency silicon PERT cells on MCZ substrates and 24•7% efficiency PERL cells on FZ substrates

This paper reports the recent improvements in the energy conversion efficiencies of solar cells on magnetically-confined Czochralski gr own (MCZ) and float zone (FZ) silicon substrates at the University of New South Wales. A PERT (passivated emitter, rear totally-diffused) cell structure has been used to I educe the cell series resistance from higher resistivity substrates. The total rear boron diffusion in this PERT structure appears to improve the surface passivation quality of MCZ and some FZ substrates. Hence, higher open-circuit voltages were observed for some PERT cells. One of these cells on MCZ substrates demonstrated 24.5% energy conversion efficiency at Sandia National Laboratories under the standard global spectrum (100 in mW/cm(2)) at 25 degrees C. This is the highest efficiency ever reported for a MCZ silicon solar cell. The cells made on MCZ substrates also showed stable cell performance rather than the usually reported unstable performance for boron-doped CZ substrates. Also reported is a PERL (passivated emitter, rear locally-diffused) cell on a FZ substrate of 24.7% efficiency, which is the highest efficiency ever reported for any silicon solar cell. Copyright (C) 1999 John Wiley & Sons, Ltd.