Vibrational Spectroscopy of Sulfur-Containing Silicon-Rich Silicon-Oxide Films Fabricated via a Coevaporation Technique

被引：0

作者：

Jin, Byeong-Kyou ^{[1
]}

Choi, Yong Gyu ^{[1
]}

机构：

[1] Korea Aerosp Univ, Dept Mat Sci & Engn, Gyeonggi 412791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 03期

关键词：

Silicon oxysulfide; Optoelectronic thin films; Infrared spectroscopy; Optical bandgap; THIN-FILMS; OPTICAL-PROPERTIES; INTERSTITIAL MOLECULE; COLOR-CENTERS; PHOTOLUMINESCENCE; SI; VAPOR; MANIFESTATIONS; DEPOSITION; SPECTRA;

D O I：

10.3938/jkps.54.1167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have fabricated sulfur-containing silicon-rich silica thin films by using a coevaporation technique. Transmission spectra in the infrared region indicated the presence of S atoms participating in the silica networks via Si-S bonds while absorption spectra in the ultraviolet/visible region proved that some of the S atoms were present in the form Of S(2) and S(3) molecules. The optical bandgap energy was inversely proportional to the number of sulfur atoms incorporated. The structural evolution of the thin films is discussed in connection with the S concentration.

引用

页码：1167 / 1171

页数：5

共 26 条

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