Dual-Gate InGaZnO Thin-Film Transistors with Organic Polymer as a Dielectric Layer

被引：16

作者：

Choi, Ji-Hyuk ^{[1
]}

Seo, Hyun-Sik ^{[1
,2
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] LG Display LCD Res & Dev Ctr, Paju Si 413811, Gyeonggi Do, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期

关键词：

amorphous semiconductors; dielectric thin films; gallium compounds; III-VI semiconductors; indium compounds; polymers; thin film transistors; wide band gap semiconductors; zinc compounds; FABRICATION;

D O I：

10.1149/1.3077176

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive V-th shift under positive bias stress, the highly stable V-th shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

引用

页码：H145 / H148

页数：4

共 29 条

[1] Photodetecting properties of ZnO-based thin-film transistors [J].

Bae, HS ;

Yoon, MH ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315

[2] Field-effect detection of chemical species with hybrid organic/inorganic transistors [J].

Bartic, C ;

Campitelli, A ;

Borghs, S .

APPLIED PHYSICS LETTERS, 2003, 82 (03) :475-477

[3] Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer [J].

Choi, Ji-Hyuk ;

Khang, Dahl-Young ;

Myoung, Jae-Min .

SOLID STATE COMMUNICATIONS, 2008, 148 (3-4) :126-130

[4] Ultimately thin double-gate SOI MOSFETs [J].

Ernst, T ;

Cristoloveanu, S ;

Ghibaudo, G ;

Ouisse, T ;

Horiguchi, S ;

Ono, Y ;

Takahashi, Y ;

Murase, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) :830-838

[5] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[6] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[7] Towards see-through displays:: Fully transparent thin-film transistors driving transparent organic light-emitting diodes [J].

Görrn, P ;

Sander, M ;

Meyer, J ;

Kröger, M ;

Becker, E ;

Johannes, HH ;

Kowalsky, W ;

Riedl, T .

ADVANCED MATERIALS, 2006, 18 (06) :738-+

[8]

*IEEE, 2004, 1620TM IEEE

[9] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[10] Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics [J].

Ju, Sanghyun ;

Janes, David B. ;

Lu, Gang ;

Facchetti, Antonio ;

Marks, Tobin J. .

APPLIED PHYSICS LETTERS, 2006, 89 (19)

← 1 2 3 →