Controlling phosphorus doping concentration in ZnO nanorods by low temperature hydrothermal method

被引:7
|
作者
Hwang, Sung-Hwan [1 ]
Moon, Kyeong-Ju [1 ]
Lee, Tae Il [1 ]
Lee, Woong [2 ]
Myoung, Jae-Min [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea
[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyoungnam, South Korea
基金
新加坡国家研究基金会;
关键词
Nanostructures; Semiconductors; Chemical synthesis; Photoluminescence spectroscopy; FABRICATION;
D O I
10.1016/j.matchemphys.2013.09.038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phosphorous-doped ZnO nanorods (NRs) were synthesized with controllable morphology and doping concentration on top of the array of undoped natural n-type ZnO NRs by hydrothermal process. By changing the concentration of NH4OH to adjust the pH of the reactant solution containing zinc acetate, hexamethylenetetramine, and ammonium phosphate, it was possible to control the morphology, doping concentration, and band structure of the ZnO nanostructures formed on the top side of the undoped NRs array. When the NH4OH concentration was 1 vol% substitutional dopant P formed shallow acceptor levels in the ZnO NRs, while higher NH4OH concentration resulted in the formation of donor levels as well as the compensation of the acceptors. A model p-n homojunction device based on the P-doped ZnO NRs consecutively attached to the initially synthesized n-type NRs showed a rectifying junction behavior confirming the formation of the p-type ZnO NRs with low doping concentration of P. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:600 / 604
页数:5
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