Single-source MOCVD of Fe/Sn alloy thin films

被引：1
|
作者：
Chi, KM [1 ]
Liu, SH [1 ]
Chien, SH [1 ]
机构：
[1] Natl Chung Cheng Univ, Dept Chem, Chiayi 621, Taiwan
来源：
CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 05期
关键词：
D O I：
10.1021/cm010654m
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Two organometallic compounds containing an Fe-Sn bond, CpFe(CO)(2)(SnMe3) (Cp: eta(5)-cyclopentadienyl) and cis-Fe(CO)(4)(SnMe3)(2), have been used as single-source low-pressure CVD precursors to grow Fe/Sn alloy thin films at 300-420 degreesC. Deposited films were characterized by various surface analytical techniques. Electron probe microanalyses show that Fe and Sn elements are evenly distributed in the films. X-ray powder diffraction patterns indicate that these are polycrystalline films. Polycrystalline FeSn films have been successfully prepared from CpFe(CO)(2)(SnMe3) with the deposition rates of 78-175 Angstrom/min. The films composed of FeSn2 phase with a minor constituent of FeSn were obtained by using cis-Fe-(CO)(4)(SnMe3)(2) as precursor and the deposition rates were 130-330 Angstrom/min.
引用
收藏
页码：2028 / 2032
页数：5
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