Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs

被引：25
作者：
Yang, Y. [1 ]
Shen, W. Z. [1 ]
Liu, H. C. [1 ,3 ]
Laframboise, S. R. [3 ]
Wicaksono, S. [2 ]
Yoon, S. F. [2 ]
Tan, K. H. [2 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期
关键词：
aluminium compounds; gallium arsenide; gallium compounds; III-V semiconductors; infrared detectors; light emitting diodes; p-i-n photodiodes; semiconductor growth; MOLECULAR-BEAM EPITAXY; QUANTUM-EFFICIENCY; MU-M; EMISSION; GAINNAS; DIODES;
D O I：
10.1063/1.3091402
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature full GaAs-based near-infrared (NIR) upconversion has been demonstrated by connecting lattice-matched GaNAsSb/GaAs p-i-n photodetectors in series with commercial GaAs/AlGaAs light-emitting diodes (LEDs). Due to the avalanche gain in GaNAsSb/GaAs photodetectors and high internal efficiency in GaAs/AlGaAs LEDs, the upconversion efficiency of the integrated system reaches 0.048 W/W under -7 V bias, much higher than any existing NIR upconverters without amplifying structures. We have further investigated the dependence of the upconversion efficiency on applied bias and incident light intensity. The present work establishes an experimental base for direct epitaxial growth of full GaAs-based NIR upconverters with high upconversion efficiencies.
引用
收藏
页数：3
相关论文
共 19 条
  • [1] Wafer bonding of different III-V compound semiconductors by atomic hydrogen surface cleaning
    Akatsu, T
    Plössl, A
    Scholz, R
    Stenzel, H
    Gösele, U
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) : 3856 - 3862
  • [2] Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector
    Ban, D.
    Han, S.
    Lu, Z. H.
    Oogarah, T.
    SpringThorpe, A. J.
    Liu, H. C.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (09)
  • [3] Optimized GaAs/AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices
    Ban, D
    Luo, H
    Liu, HC
    Wasilewski, ZR
    SpringThorpe, AJ
    Glew, R
    Buchanan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 5243 - 5248
  • [4] Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device
    Chikamatsu, M
    Ichino, Y
    Takada, N
    Yoshida, M
    Kamata, T
    Yase, K
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 769 - 771
  • [5] 1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs -: art. no. 111105
    Han, Q
    Yang, XH
    Niu, ZC
    Ni, HQ
    Xu, YQ
    Zhang, SY
    Du, Y
    Peng, LH
    Zhao, H
    Tong, CZ
    Wu, RH
    Wang, QM
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (11)
  • [6] Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
    Harmand, JC
    Ungaro, G
    Largeau, L
    Le Roux, G
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2482 - 2484
  • [7] Héroux JB, 1999, APPL PHYS LETT, V75, P2716, DOI 10.1063/1.125126
  • [8] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
    Kondow, M
    Uomi, K
    Niwa, A
    Kitatani, T
    Watahiki, S
    Yazawa, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1273 - 1275
  • [9] SOLID-STATE INFRARED-WAVELENGTH CONVERTER EMPLOYING HIGH-QUANTUM-EFFICIENCY GE-GAAS HETEROJUNCTION
    KRUSE, PW
    PRIBBLE, FC
    SCHULZE, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1718 - &
  • [10] 1.5 μm up-conversion device
    Liu, HC
    Gao, M
    Poole, PJ
    [J]. ELECTRONICS LETTERS, 2000, 36 (15) : 1300 - 1301
12