Preparation of In2O3:F thin films grown by spray pyrolysis technique

被引：22

作者：

Rozati, SM ^{[1
]}

Ganj, T ^{[1
]}

机构：

[1] Univ Guilan, Dept Phys, Rasht 41335, Iran

来源：

RENEWABLE ENERGY | 2004年 / 29卷 / 10期

关键词：

In2O3 : F; spray pyrolysis; transparent-conducting oxide;

D O I：

10.1016/j.renene.2004.01.007

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Transparent conducting fluorine doped indium oxide (In2O3:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (T-s = 300 degreesC) showed no peaks of In2O3:F. In the useful range for deposition (i.e. 425-600 degreesC), the orientation of the films was predominantly [400]. For the 4500 A thick In2O3:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Omega and average transmission in the visible wavelength rang (400-700 nm) was 88%. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1665 / 1669

页数：5

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