On the scalability of doped hafnia thin films

被引：4

作者：

Adelmann, C. ^{[1
]}

Schram, T. ^{[1
]}

Chew, S. -A. ^{[1
]}

Woicik, J. C. ^{[2
]}

Brizzi, S. ^{[3
]}

Tallarida, M. ^{[3
]}

Schmeisser, D. ^{[3
]}

Horiguchi, N. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Ragnarsson, L. -A. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] NIST, Gaithersburg, MD 20899 USA

[3] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 12期

关键词：

HFO2; DIELECTRICS; OXIDE;

D O I：

10.1063/1.4870075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) in the range of 10 angstrom, crystallized Gd:HfO2 showed higher leakage current densities than crystallized Al:HfO2, with undoped HfO2 in between. Ultimately, the scalability of Al:HfO2 was limited by the ability to crystallize the films at a given thermal budget. As a result, for post-deposition annealing at 800 degrees C, the EOT of Al:HfO2 based MOS capacitors was limited to similar to 8 angstrom. However, for such an EOT, leakage current densities were reduced by about 100x with respect to HfO2. This demonstrates the high potential of Al:HfO2 for low-standby-power MOS devices. (C) 2014 AIP Publishing LLC.

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页数：4

相关论文

共 29 条

[1] Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films [J].

Adelmann, C. ;

Sriramkumar, V. ;

Van Elshocht, S. ;

Lehnen, P. ;

Conard, T. ;

De Gendt, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[2] Atomic Layer Deposition of Gd-Doped HfO2 Thin Films [J].

Adelmann, C. ;

Tielens, H. ;

Dewulf, D. ;

Hardy, A. ;

Pierreux, D. ;

Swerts, J. ;

Rosseel, E. ;

Shi, X. ;

Van Bael, M. K. ;

Kittl, J. A. ;

Van Elshocht, S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) :G105-G110

[3] Interdiffusion and crystallization in HfO2/Al2O3 superlattices [J].

Adelmann, C. ;

Kesters, J. ;

Opsomer, K. ;

Detavernier, C. ;

Kittl, J. A. ;

Van Elshocht, S. .

APPLIED PHYSICS LETTERS, 2009, 95 (09)

[4]

[Anonymous], 2014, APPL PHYS LETT, V104

[5] The high-k solution [J].

Bohr, Mark T. ;

Chau, Robert S. ;

Ghani, Tahir ;

Mistry, Kaizad .

IEEE SPECTRUM, 2007, 44 (10) :29-35

[6] Permittivity enhancement of hafnium dioxide high-κ films by cerium doping [J].

Chalker, P. R. ;

Werner, M. ;

Romani, S. ;

Potter, R. J. ;

Black, K. ;

Aspinall, H. C. ;

Jones, A. C. ;

Zhao, C. Z. ;

Taylor, S. ;

Heys, P. N. .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[7] Integrated nanoelectronics for the future [J].

Chau, Robert ;

Doyle, Brian ;

Datta, Suman ;

Kavalieros, Jack ;

Zhang, Kevin .

NATURE MATERIALS, 2007, 6 (11) :810-812

[8] Development of hafnium based high-k materials-A review [J].

Choi, J. H. ;

Mao, Y. ;

Chang, J. P. .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2011, 72 (06) :97-136

[9] Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices [J].

Govindarajan, S. ;

Boescke, T. S. ;

Sivasubramani, P. ;

Kirsch, P. D. ;

Lee, B. H. ;

Tseng, H.-H. ;

Jammy, R. ;

Schroeder, U. ;

Ramanathan, S. ;

Gnade, B. E. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[10] The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films [J].

Hill, D. H. ;

Bartynski, R. A. ;

Nguyen, N. V. ;

Davydov, Albert C. ;

Chandler-Horowitz, Deane ;

Frank, Martin M. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)