Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

被引：96

作者：

Ambrogio, Stefano ^{[1
,2
]}

Balatti, Simone ^{[1
,2
]}

Choi, Seol ^{[1
,2
]}

Ielmini, Daniele ^{[1
,2
]}

机构：

[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, MI, Italy

[2] IU NET, I-20133 Milan, MI, Italy

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 23期

关键词：

SOLID-ELECTROLYTE; MIGRATION;

D O I：

10.1002/adma.201306250

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrochemical memory (ECM) shows a marked asymmetric switching due to the different ionic energy barriers under a positive or negative voltage. The switching asymmetry can be explained by the mechanical-stress gradient aiding the CF retraction under negative erase. CF stabilization is demonstrated by increasing the program pulse width, suggesting the alleviation of the stress field through electrically induced relaxation and allowing reliable ECM storage to be achieved.

引用

页码：3885 / 3892

页数：8

共 48 条

[1] Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories [J].

Cho, Deok-Yong ;

Tappertzhofen, Stefan ;

Waser, Rainer ;

Valov, Ilia .

SCIENTIFIC REPORTS, 2013, 3

[2] Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory [J].

Cho, Deok-Yong ;

Valov, Ilia ;

van den Hurk, Jan ;

Tappertzhofen, Stefan ;

Waser, Rainer .

ADVANCED MATERIALS, 2012, 24 (33) :4552-4556

[3] In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory [J].

Choi, Sang-Jun ;

Park, Gyeong-Su ;

Kim, Ki-Hong ;

Cho, Soohaeng ;

Yang, Woo-Young ;

Li, Xiang-Shu ;

Moon, Jung-Hwan ;

Lee, Kyung-Jin ;

Kim, Kinam .

ADVANCED MATERIALS, 2011, 23 (29) :3272-+

[4] Si/a-Si core/shell nanowires as nonvolatile crossbar switches [J].

Dong, Yajie ;

Yu, Guihua ;

McAlpine, Michael C. ;

Lu, Wei ;

Lieber, Charles M. .

NANO LETTERS, 2008, 8 (02) :386-391

[5] Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process [J].

Gopalan, C. ;

Ma, Y. ;

Gallo, T. ;

Wang, J. ;

Runnion, E. ;

Saenz, J. ;

Koushan, F. ;

Blanchard, P. ;

Hollmer, S. .

SOLID-STATE ELECTRONICS, 2011, 58 (01) :54-61

[6] High-temperature elasticity and viscosity of GexSe1-x glasses in the transition range [J].

Gueguen, Yann ;

Rouxel, Tanguy ;

Gadaud, Pascal ;

Bernard, Cedric ;

Keryvin, Vincent ;

Sangleboeuf, Jean-Christophe .

PHYSICAL REVIEW B, 2011, 84 (06)

[7] Indentation creep of Ge-Se chalcogenide glasses below Tg:: elastic recovery and non-Newtonian flow [J].

Guin, JP ;

Rouxel, T ;

Keryvin, V ;

Sangleboeuf, JC ;

Serre, I ;

Lucas, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 298 (2-3) :260-269

[8] Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems [J].

Guo, Xin ;

Schindler, Christina .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[9]

Halliday D., 1992, PHYSICS, V1

[10] Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 [J].

Ielmini, D. ;

Lavizzari, S. ;

Sharma, D. ;

Lacaita, A. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

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