Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

被引：92
作者：
Ambrogio, Stefano [1 ,2 ]
Balatti, Simone [1 ,2 ]
Choi, Seol [1 ,2 ]
Ielmini, Daniele [1 ,2 ]
机构：
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, MI, Italy
[2] IU NET, I-20133 Milan, MI, Italy
来源：
ADVANCED MATERIALS | 2014年 / 26卷 / 23期
关键词：
SOLID-ELECTROLYTE; MIGRATION;
D O I：
10.1002/adma.201306250
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Electrochemical memory (ECM) shows a marked asymmetric switching due to the different ionic energy barriers under a positive or negative voltage. The switching asymmetry can be explained by the mechanical-stress gradient aiding the CF retraction under negative erase. CF stabilization is demonstrated by increasing the program pulse width, suggesting the alleviation of the stress field through electrically induced relaxation and allowing reliable ECM storage to be achieved.
引用
收藏
页码：3885 / 3892
页数：8
相关论文
共 48 条
  • [1] Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
    Cho, Deok-Yong
    Tappertzhofen, Stefan
    Waser, Rainer
    Valov, Ilia
    [J]. SCIENTIFIC REPORTS, 2013, 3
  • [2] Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
    Cho, Deok-Yong
    Valov, Ilia
    van den Hurk, Jan
    Tappertzhofen, Stefan
    Waser, Rainer
    [J]. ADVANCED MATERIALS, 2012, 24 (33) : 4552 - 4556
  • [3] In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
    Choi, Sang-Jun
    Park, Gyeong-Su
    Kim, Ki-Hong
    Cho, Soohaeng
    Yang, Woo-Young
    Li, Xiang-Shu
    Moon, Jung-Hwan
    Lee, Kyung-Jin
    Kim, Kinam
    [J]. ADVANCED MATERIALS, 2011, 23 (29) : 3272 - +
  • [4] Si/a-Si core/shell nanowires as nonvolatile crossbar switches
    Dong, Yajie
    Yu, Guihua
    McAlpine, Michael C.
    Lu, Wei
    Lieber, Charles M.
    [J]. NANO LETTERS, 2008, 8 (02) : 386 - 391
  • [5] Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process
    Gopalan, C.
    Ma, Y.
    Gallo, T.
    Wang, J.
    Runnion, E.
    Saenz, J.
    Koushan, F.
    Blanchard, P.
    Hollmer, S.
    [J]. SOLID-STATE ELECTRONICS, 2011, 58 (01) : 54 - 61
  • [6] High-temperature elasticity and viscosity of GexSe1-x glasses in the transition range
    Gueguen, Yann
    Rouxel, Tanguy
    Gadaud, Pascal
    Bernard, Cedric
    Keryvin, Vincent
    Sangleboeuf, Jean-Christophe
    [J]. PHYSICAL REVIEW B, 2011, 84 (06):
  • [7] Indentation creep of Ge-Se chalcogenide glasses below Tg:: elastic recovery and non-Newtonian flow
    Guin, JP
    Rouxel, T
    Keryvin, V
    Sangleboeuf, JC
    Serre, I
    Lucas, J
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 298 (2-3) : 260 - 269
  • [8] Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
    Guo, Xin
    Schindler, Christina
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [9] Halliday D., 1992, PHYSICS, V1
  • [10] Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5
    Ielmini, D.
    Lavizzari, S.
    Sharma, D.
    Lacaita, A. L.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (19)
12345