A n-polythiophene/poly(vinyl chloride)/p-polythiophene laminate film diode

被引:1
作者
Jin, S
Ji, M
Zhang, CY
Xue, G
机构
[1] Nanjing Univ, Nanjing, China
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An electrochemically deposited polythiophene film is found to be working as a p-n junction diode. The rectification ratio calculated from electrical current at 4.0 V was above 150. Although diodes prepared by vacuum deposition on metals and electrochemical polymerization on silicon have been reported, this is claimed to be the first report of a diode made from organic materials only. This p-polythiophene/poly (vinyl chloride)/p-polythiophene film junction diode seems closer to the silicon-based junction in electrical properties. Additionally, this laminate film junction is found to be flexible and has a good mechanical properties.
引用
收藏
页码:1305 / 1306
页数:2
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