Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3

被引：7

作者：

Merz, C ^{[1
]}

Kunzer, M ^{[1
]}

Santic, B ^{[1
]}

Kaufmann, U ^{[1
]}

Akasaki, I ^{[1
]}

Amano, H ^{[1
]}

机构：

[1] MEIJO UNIV,DEPT ELECT ENGN,NAGOYA,AICHI 468,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

GaN/Al2O3; free and bound excitons; photoluminescence;

D O I：

10.1016/S0921-5107(96)01858-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of free and bound exciton lines in high-purity, undoped wurtzite GaN layers has been studied by photoluminescence (PL) between 2 and 300 K. Below 30 K the neutral donor bound exciton D degrees X produces the strongest near band gay PL signal whereas free A and B excitons dominate the spectrum at room temperature. A deconvolution of the asymmetric D degrees X line shape provides strong evidence for two residual shallow donors differing in ionisation energies by a factor of 1.5. The origin of a PL line occurring at E-g = 116 meV is discussed in two alternative models. (C) 1997 Elsevier Science S.A.

引用

页码：176 / 180

页数：5

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