Tunnel magnetoresistance effect in CoFeB/MgO/Co2FeSi and Co2MnSi tunnel junctions

被引：7

作者：

Daibou, T. ^{[1
]}

Shinano, M. ^{[1
]}

Hattori, M. ^{[1
]}

Sakuraba, Y. ^{[1
]}

Oogane, M. ^{[1
]}

Ando, Y. ^{[1
]}

Miyazaki, T. ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2006年 / 42卷 / 10期

关键词：

CoFeB; Heusler alloys; MgO; MT[!text type='Js']Js[!/text;

D O I：

10.1109/TMAG.2006.879733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystaline Co2FeSi and Co-2 MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90 % at RT for the MTJ with Co-2 FeSi electrode after annealing at 325 degrees C. The MTJ with Co-2 MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co-2 MnSi Hensler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi.

引用

页码：2655 / 2657

页数：3

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