A fully integrated 3-band OFDM UWB transceiver in 0.25μm SiGeBiCMOS

被引：0
作者：
Bergervoet, J. [1 ]
Kundur, H.
Leenaerts, D. M. W.
van de Beek, R. C. H.
Roovers, R.
van der Weide, G.
Waite, H. [1 ]
Aggarwal, S. [1 ]
机构：
[1] Phillips Semicond, San Jose, CA USA
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年
关键词：
transceivers; UWB; BiCMOS; radio;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25 mu m SiGe BiCMOS process, and has a die area of less than 4mm(2). The power consumption is 47mA, 43mA, and 27mA, at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NIT is 4.5dB and the iIP3 is -6dBm.
引用
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页码：301 / +
页数：2
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