ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

被引:29
作者
Lucas, B. [1 ]
Rammal, W. [1 ]
Moliton, A. [1 ]
机构
[1] Univ Limoges, Fac Sci & Tech, CNRS,UMR 6172,Inst Rech XLIM, Dept MINACOM, F-87060 Limoges, France
关键词
D O I
10.1051/epjap:2006056
中图分类号
O59 [应用物理学];
学科分类号
摘要
Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate ( PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 degrees C) ITO deposition assisted by an oxygen flow ( (1 cm(3)/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10(-3) Omega.cm and a surface roughness lower than 1.5 nm. Thus we realized flexible organic light-emitting diodes ( FOLEDs) with good performances: a maximum luminance of 12000 cd/m(2) at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V ( or a maximum current efficiency of 4 cd/A at 14 V) for the ( PET( 50 mu m)/ITO( 200 nm)/TPD( 40 nm)/Alq3( 60 nm)/ Ca/Al) structure.
引用
收藏
页码:179 / 187
页数:9
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