Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane-nitrogen atmospheres

被引:36
作者
Motta, EF [1 ]
Pereyra, I [1 ]
机构
[1] Univ Sao Paulo, Escola Politecn, Dept Engn Sistemas Electron, BR-05424970 Sao Paulo, Brazil
关键词
D O I
10.1016/j.jnoncrysol.2004.03.034
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, films are deposited by PECVD-RF plasma using a gas mixture of CH4, N-2 and He or Ar. The Ar/CH4 and He/CH4 ratio is kept constant, while the nitrogen flow is allowed to vary. The samples were arranged in the anode plate as well as in the cathode plate. The effect of nitrogen addition on the films optical and structural properties of the films was analyzed by FTIR spectroscopy, UV-VIS-NIR spectroscopy, profilometry, ellipsometry and RBS. The intensities of the C=N (1600 cm(-1)), C=N (2300 cm(-1)) and NH (3250 cm(-1)) absorption bands, in the IR spectra, increase with the N-2/CH4 flow ratio. Samples deposited in the grounded electrode, show a decrease in the CH,, stretching band for increasing N-2/CH4 flow ratio, while the NH absorption bond increases, indicating that hydrogen is preferentially bonded to nitrogen. The C=N absorption increases for increasing N/C ratio; indicating that a nitrile phase is also formed. For the samples deposited in the powered electrode (Fig. 5), the CNH absorption band (1000-1700 cm(-1)) is much larger than the other bands (CHn and NH). The increasing signal in the 1000-1300 cm(-1) region suggests an increase in nitrogen bonding with sp(3) C. The C=N absorption is very small compared with the samples deposited in the grounded electrode. This behavior could be attributed to the increase in the methane and nitrogen radicals caused by stronger ion bombardment in the active electrode. (C) 2004 Elsevier B.V. All rights reserved.
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页码:525 / 529
页数:5
相关论文
共 23 条
[1]   PROPERTIES OF NITROGEN-DOPED AMORPHOUS HYDROGENATED CARBON-FILMS [J].
AMIR, O ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :4958-4962
[2]   Low temperature plasma enhanced chemical vapour deposition boron nitride [J].
Carreno, MNP ;
Bottecchia, JP ;
Pereyra, I .
THIN SOLID FILMS, 1997, 308 :219-222
[3]  
CATHERINE Y, 1991, NATO ADV SCI I B-PHY, V266, P193
[4]   Relationship between composition and position of Raman and IR peaks in amorphous carbon alloys [J].
Fanchini, G ;
Messina, G ;
Paoletti, A ;
Ray, SC ;
Santangelo, S ;
Tagliaferro, A ;
Tucciarone, A .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 :257-262
[5]   Vibrational properties and microstructure of reactively sputtered hydrogenated carbon nitrides [J].
Fanchini, G ;
Tagliaferro, A ;
Messina, G ;
Santangelo, S ;
Paoletti, A ;
Tucciarone, A .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1155-1165
[6]   INTERNAL-STRESS REDUCTION BY NITROGEN INCORPORATION IN HARD AMORPHOUS-CARBON THIN-FILMS [J].
FRANCESCHINI, DF ;
ACHETE, CA ;
FREIRE, FL .
APPLIED PHYSICS LETTERS, 1992, 60 (26) :3229-3231
[7]   Hard amorphous hydrogenated carbon-nitrogen films obtained by PECVD in methane-ammonia atmospheres [J].
Franceschini, DF ;
Freire, FL ;
Achete, CA ;
Mariotto, G .
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) :471-474
[8]   Ion beam deposited carbon nitride films: Characterization and identification of chemical sputtering [J].
Hammer, P ;
Baker, MA ;
Lenardi, C ;
Gissler, W .
THIN SOLID FILMS, 1996, 290 :107-111
[9]  
HAUFMAN JH, 1989, PHYS REV B, V39, P13053
[10]   Carbon nitride films incorporated with metal by rf plasma enhanced chemical vapor deposition [J].
He, JL ;
Chang, WL .
THIN SOLID FILMS, 1998, 312 (1-2) :86-92