Electrical and optical characterizations of β-Ga2O3: Sn films deposited on MgO(110) substrate by MOCVD

被引：56

作者：

Mi, Wei ^{[1
]}

Du, Xuejian ^{[1
]}

Luan, Caina ^{[1
]}

Xiao, Hongdi ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

来源：

RSC ADVANCES | 2014年 / 4卷 / 58期

基金：

中国国家自然科学基金;

关键词：

GA2O3; THIN-FILMS; TRANSPARENT; GROWTH; TEMPERATURE; PHOTOLUMINESCENCE;

D O I：

10.1039/c4ra02479f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tin-doped beta-Ga2O3 (beta-Ga2O3: Sn) films doped with different tin concentrations were deposited on MgO (110) substrates by metal organic chemical vapor deposition (MOCVD) at 700 degrees C. The effect of doping on the structural, electrical and optical properties of the films was investigated. The 10% Sn-doped film exhibited the best electrical conductivity properties with the lowest resistivity about 5.21 x 10(-2) Omega cm, which is over ten orders of magnitude lower than the un-doped film. Micro-structural analysis revealed that the film with 10% Sn content had a clear in-plane relationship of beta-Ga2O3 (100) parallel to MgO (110) with beta-Ga2O3 ((2) over bar 01) parallel to MgO (111). The average transmittance of the samples in the visible range exceeded 87% and the optical band gap of the films varied from 4.12 to 4.80 eV.

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收藏

页码：30579 / 30583

页数：5

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