An Analysis on Turn-off Behaviour of 1.2kV NPT-CIGBT under Clamped Inductive Load Switching

被引：2
|
作者：
Kong, S. T. [1 ]
Ngwendson, L. [1 ]
Sweet, M. [1 ]
Narayanan, E. M. Sankara [1 ]
机构：
[1] Univ Sheffield, Sheffield S10 2TN, S Yorkshire, England
来源：
2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 | 2008年
关键词：
Power Semiconductor Device; Device characteristics;
D O I：
10.1109/EPEPEMC.2008.4635242
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
For the first time, this paper analyses the turn-off behaviour of the planar 1.2kV/25A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25 degrees C and 125 degrees C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT tarn-off process.
引用
收藏
页码：43 / 47
页数：5
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