X-ray diffraction study on pressure-induced phase transformation in nanocrystalline GaAs

被引：10

作者：

Jiang, JZ

Olsen, JS

Gerward, L

Steenstrup, S

机构：

[1] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark

[2] Univ Copenhagen, Niels Bohr Inst, Oersted Lab, DK-2100 Copenhagen, Denmark

来源：

HIGH PRESSURE RESEARCH | 2002年 / 22卷 / 02期

关键词：

phase transformation; transition pressure; equation of state; X-ray diffraction; electrical resistivity; nanostructured material;

D O I：

10.1080/08957950212806

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two-component model developed by Gleiter.

引用

页码：395 / 398

页数：4

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