Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

被引：33

作者：

Masek, Karel ^{[1
]}

Vaclavu, Michal ^{[1
]}

Babor, Petr ^{[2
]}

Matolin, Vladimir ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, CR-18000 Prague 8, Czech Republic

[2] Brno Univ Technol, Fac Mech Engn, Inst Engn Phys, Brno 61669, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 13-14期

关键词：

Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering; CERIUM OXIDE; PHOTOELECTRON-SPECTROSCOPY; CEO2; REDUCTION; SUBSTRATE; LAYERS;

D O I：

10.1016/j.apsusc.2009.02.080

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ -> Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f(0) of cerium oxide by forming Ce 4f(1) state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)(+) state, which belongs to SnCeO2 species. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：6656 / 6660

页数：5

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