Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells

被引:174
作者
Gal, D
Hodes, G [1 ]
Lincot, D
Schock, HW
机构
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] ENSCP, Lab Electrochim & Chim Analyt, F-75231 Paris 05, France
[3] Univ Stuttgart, Inst Phys Elect, D-70589 Stuttgart, Germany
关键词
ZnO; electrodeposition; photovoltaic cells;
D O I
10.1016/S0040-6090(99)00772-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide is a wide band gap semiconductor with wide application in thin film devices such as n-type window layers for thin film solar cells, piezoelectric and luminescent devices, and for catalytic applications. We have cathodically electrodeposited films of ZnO by reduction of dissolved oxygen in a non-aqueous solution (dimethylsulfoxide) containing a Zn salt. This method allows a large deposition potential window and gives films with high transparency, good crystallinity and adherence. The ZnO was electrodeposited on Cu(In,Ga)Se-2 as a buffer layer. The resulting solar cells gave higher light-to-electricity conversion efficiencies (> 11%) than those made with conventional r.f. sputtered insulating ZnO. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:79 / 83
页数:5
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