Electrochemical deposition of zinc oxide films from non-aqueous solution: a new buffer/window process for thin film solar cells

被引：175

作者：

Gal, D

Hodes, G ^{[1
]}

Lincot, D

Schock, HW

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

[2] ENSCP, Lab Electrochim & Chim Analyt, F-75231 Paris 05, France

[3] Univ Stuttgart, Inst Phys Elect, D-70589 Stuttgart, Germany

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

ZnO; electrodeposition; photovoltaic cells;

D O I：

10.1016/S0040-6090(99)00772-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide is a wide band gap semiconductor with wide application in thin film devices such as n-type window layers for thin film solar cells, piezoelectric and luminescent devices, and for catalytic applications. We have cathodically electrodeposited films of ZnO by reduction of dissolved oxygen in a non-aqueous solution (dimethylsulfoxide) containing a Zn salt. This method allows a large deposition potential window and gives films with high transparency, good crystallinity and adherence. The ZnO was electrodeposited on Cu(In,Ga)Se-2 as a buffer layer. The resulting solar cells gave higher light-to-electricity conversion efficiencies (> 11%) than those made with conventional r.f. sputtered insulating ZnO. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：79 / 83

页数：5

共 16 条

[1]

HODES G, 1993, ISRAEL J CHEM, V33, P95

[2]

HODES G, 1985, PHYSICAL ELECTROCHEM, P515

[3] SURFACE MICROSTRUCTURES OF ZNO COATED SNO2-F FILMS [J].