FinFET and MOSFET preliminary comparison of gate oxide reliability

被引：11
|
作者：
Fernandez, R. [1 ]
Rodriguez, R.
Nafria, M.
Aymerich, X.
Kaczer, B.
Groeseneken, G.
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra, Spain
[2] IES Castellarnau, Dept Educ Generalitat Catalunya, Sabadell 08206, Spain
[3] IMEC, B-3001 Louvain, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2006.07.043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.
引用
收藏
页码：1608 / 1611
页数：4
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