Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

被引：21

作者：

Wang, Jiaming ^{[1
]}

Xu, Fujun ^{[1
]}

Zhang, Xia ^{[1
]}

An, Wei ^{[1
]}

Li, Xin-Zheng ^{[1
,2
]}

Song, Jie ^{[1
]}

Ge, Weikun ^{[1
,5
]}

Tian, Guangshan ^{[1
]}

Lu, Jing ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Tang, Ning ^{[1
]}

Yang, Zhijian ^{[1
]}

Li, Wei ^{[3
,4
]}

Wang, Weiying ^{[3
,4
]}

Jin, Peng ^{[3
,4
]}

Chen, Yonghai ^{[3
,4
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

[5] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

基金：

中国国家自然科学基金;

关键词：

QUANTUM; ALINN;

D O I：

10.1038/srep06521

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset Delta E-C, with a small contribution from the valence band offset Delta E-V which equals 0.1 eV (with E-VBM(AllnN) being aboveE(VBM)(Gan)). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering.

引用

页数：5

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