Thermally stimulated currents in layered semiconductor Tl4In3GaS8

被引：10

作者：

Gasanly, N. M. ^{[1
]}

Ozkan, H. ^{[1
]}

Mogaddam, N. A. P. ^{[1
]}

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 09期

关键词：

D O I：

10.1088/0268-1242/21/9/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found to be 5.4 x 10(-25) cm(2) and 3.3 x 10(14) cm(-3), respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 8 meV/decade for the trap distribution.

引用

页码：1250 / 1255

页数：6

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