A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

被引：9

作者：

Hofman, Jiri ^{[1
,2
]}

Holmes-Siedle, Andrew ^{[3
]}

Sharp, Richard ^{[1
]}

Haze, Jiri ^{[2
]}

机构：

[1] Cobham RAD Solut, Aeroflex Rad Europe, Harwell OX11 0QT, Oxon, England

[2] Brno Univ Technol, Brno 60190, Czech Republic

[3] REM Oxford Ltd, Witney OX29 4PD, Oxon, England

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

Automated test equipment; MTC; PMOS; RADFET; temperature coefficients; temperature effects; test methods; test software; thermoelectric cooler; thermometers; TID;

D O I：

10.1109/TNS.2015.2498948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.

引用

页码：2525 / 2531

页数：7

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