Memory effects in backscattering of two-dimensional electrons in corrugated systems

被引：1
|
作者：
Sotomayor, N. M. [1 ]
da Rocha Neto, J. F. [1 ]
Gusev, G. M. [1 ]
机构：
[1] Univ Sao Paulo, Inst Fis, BR-66318 Sao Paulo, Brazil
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2006年 / 36卷 / 2A期
关键词：
backscattering of two-dimensional electrons; numerical study; memory effects;
D O I：
10.1590/S0103-97332006000300028
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
it is reported a theoretical and numerical study of non-markovian memory effects in backscattering of ballistic electrons constrained to move in a corrugated surface topography. Two approaches to model the electron trajectories are used, better approximation is obtained with the Hamilton-Dirac method for constrained system.
引用
收藏
页码：340 / 342
页数：3
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