Memory effects in backscattering of two-dimensional electrons in corrugated systems

被引：1

作者：

Sotomayor, N. M. ^{[1
]}

da Rocha Neto, J. F. ^{[1
]}

Gusev, G. M. ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-66318 Sao Paulo, Brazil

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2006年 / 36卷 / 2A期

关键词：

backscattering of two-dimensional electrons; numerical study; memory effects;

D O I：

10.1590/S0103-97332006000300028

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

it is reported a theoretical and numerical study of non-markovian memory effects in backscattering of ballistic electrons constrained to move in a corrugated surface topography. Two approaches to model the electron trajectories are used, better approximation is obtained with the Hamilton-Dirac method for constrained system.

引用

页码：340 / 342

页数：3

共 33 条

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