A 32-KB standard CMOS antifuse one-time programmable ROM embedded in a 16-bit microcontroller

被引:51
作者
Cha, Hyouk-Kyu [1 ]
Yun, Ilhyun
Kim, Jinbong
So, Byeong-Cheol
Chun, Kanghyup
Nam, Ilku
Lee, Kwyro
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
[2] MICROS Res Ctr, Taejon 305701, South Korea
[3] SAIN Informat & Commun Co, Taejon 302852, South Korea
[4] MagnaChip Semicond, Chungbuk, South Korea
[5] Samsung Elect Syst LSI, Gyeonggi, South Korea
关键词
CMOS antifuse; CMOS OTP; embedded PROM; gate-oxide breakdown; (IC)-C-2; microcontroller; nonvolatile memory; OTP ROM;
D O I
10.1109/JSSC.2006.880603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 32-KB standard CMOS antifuse one-time programmable (OTP) ROM embedded in a 16-bit microcontroller as its program memory is designed and implemented in 0.18-mu m standard CMOS technology. The proposed 32-KB OTP ROM cell array consists of 4.2 mu m(2) three-transistor (3T) OTP cells where each cell utilizes a thin gate-oxide antifuse, a high-voltage blocking transistor, and an access transistor, which are all compatible with standard CMOS process. In order for high density implementation, the size of the 3T cell has been reduced by 80% in comparison to previous work. The fabricated total chip size, including 32-KB OTP ROM, which can be programmed via external (IC)-C-2 master device such as universal (IC)-C-2 serial EEPROM programmer, 16-bit microcontroller with 16-KB program SRAM and 8-KB data SRAM, peripheral circuits to interface other system building blocks, and bonding pads, is 9.9 mm(2). This paper describes the cell, design, and implementation of high-density CMOS OTP ROM, and shows its promising possibilities in embedded applications.
引用
收藏
页码:2115 / 2124
页数:10
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