Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films

被引：140

作者：

Hu, Zhongqiang ^{[1
]}

Ma, Beihai ^{[1
]}

Koritala, R. E. ^{[2
]}

Balachandran, Uthamalingam ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Nanosci & Technol Div, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 26期

关键词：

FERROELECTRIC CERAMICS; DIELECTRIC-PROPERTIES; CAPACITORS;

D O I：

10.1063/1.4887066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U-re) and charge-discharge efficiency (eta) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 degrees C), while U-re increases linearly and eta decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high U-re (approximate to 61 J/cm(3)) and low leakage current density (approximate to 3.5 x 10(-8) and 3.5 x 10(-5) A/cm(2) at 25 and 225 degrees C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage. (C) 2014 AIP Publishing LLC.

引用

页数：4

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