Silicon doping effect on the crystallization behavior of Ge2Sb2Te5 film

被引：12
作者：
Jiang, Yifan
Xu, Ling [1 ]
Chen, Jing
Zhang, Rui
Su, Weining
Yu, Yao
Ma, Zhongyuan
Xu, Jun
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 10期
关键词：
crystallization; doping; electrical properties; Ge2Sb2Te5; microstructure; silicon; PHASE-CHANGE MEMORY; OPTICAL-PROPERTIES; RAMAN-SCATTERING; TRANSITION; LAYER;
D O I：
10.1002/pssa.201228840
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pure Ge2Sb2Te5 thin films and Si-doped Ge2Sb2Te5 thin films were deposited by electron beam evaporation method. The property of Si-doped Ge2Sb2Te5 films are compared with that of pure Ge2Sb2Te5 films. Through in situ resistance measurement and I-V characteristic tests, an improvement of amorphous stability and an increase of crystalline resistivity are observed. The phase-separation phenomenon is observed in TEM pictures and a distinct decrease of crystal grain size in Si-doped Ge2Sb2Te5 thin film can be seen in HRTEM pictures. A blueshift and broadening of peaks after Si doping in Raman spectra are found and from absorption spectra, the broadening of crystalline optical bandgap in Si-doped Ge2Sb2Te5 thin film is proved. Finally, the behavior of doped Si atoms is proposed to explain the effect of Si doping in Ge2Sb2Te5 thin film.
引用
收藏
页码：2231 / 2237
页数：7
相关论文
共 38 条
[1]   Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass [J].
Anbarasu, M. ;
Asokan, S. ;
Prusty, Sudakshina ;
Sood, A. K. .
APPLIED PHYSICS LETTERS, 2007, 91 (09)
[2]   Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition [J].
Andrikopoulos, KS ;
Yannopoulos, SN ;
Voyiatzis, GA ;
Kolobov, AV ;
Ribes, M ;
Tominaga, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (03) :965-979
[3]   Voltage-Driven Partial-RESET Multilevel Programming in Phase-Change Memories [J].
Braga, Stefania ;
Sanasi, Alessandro ;
Cabrini, Alessandro ;
Torelli, Guido .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2556-2563
[4]   The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory [J].
Cheng, Huai-Yu ;
Raoux, Simone ;
Jordan-Sweet, Jean L. .
APPLIED PHYSICS LETTERS, 2011, 98 (12)
[5]   Effect of Heating Rate on the Activation Energy for Crystallization of Amorphous Ge2Sb2Te5 Thin Film [J].
Choi, Yunjung ;
Jung, Minsu ;
Lee, Young-Kook .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (07) :F17-F19
[6]   Phase transformation behavior of N-doped Ge2Sb2+xTe5 thin films (x=0, 0.2) for phase change memory [J].
Do, Kihoon ;
Sohn, Hyunchul ;
Ko, Dae-Hong .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (10) :H867-H870
[7]   Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory [J].
Feng, J. ;
Zhang, Y. ;
Qiao, B. W. ;
Lai, Y. F. ;
Lin, Y. Y. ;
Cai, B. C. ;
Tang, T. A. ;
Chen, B. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (01) :57-62
[8]   Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory [J].
Feng, J. ;
Zhang, Z. F. ;
Zhang, Y. ;
Cai, B. C. ;
Lin, Y. Y. ;
Tang, T. A. ;
Chen, Bomy .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
[9]   Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements [J].
Friedrich, I ;
Weidenhof, V ;
Njoroge, W ;
Franz, P ;
Wuttig, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4130-4134
[10]  
Horii H., 2003, VLSI, P177
1234