Broadband blue superluminescent light-emitting diodes based on GaN

被引：66

作者：

Feltin, E. ^{[1
]}

Castiglia, A. ^{[1
]}

Cosendey, G. ^{[1
]}

Sulmoni, L. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Grandjean, N. ^{[1
]}

Rossetti, M. ^{[2
]}

Dorsaz, J. ^{[2
]}

Laino, V. ^{[2
]}

Duelk, M. ^{[2
]}

Velez, C. ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, IPEQ, CH-1015 Lausanne, Switzerland

[2] EXALOS AG, CH-8952 Schlieren, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

aluminium compounds; current density; epitaxial layers; gallium compounds; III-V semiconductors; indium compounds; semiconductor quantum wells; superluminescent diodes; wide band gap semiconductors; HIGH-POWER;

D O I：

10.1063/1.3202786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In(0.12)Ga(0.88)N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation is observed at room temperature for a current of 130 mA and a current density of 8 kA/cm(2). The central emission wavelength is 420 nm and the emission bandwidth is similar to 5 nm in the superluminescence regime. A peak optical output power of 100 mW is obtained at 630 mA under pulsed operation and an average power of 10 mW is achieved at a duty cycle of 20%.

引用

页数：3

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