MOSFET Power Loss Estimation in LLC Resonant Converters: Time Interval Analysis

In the past ten years, LLC resonant converters have become a mainstream topology for dc/dc power conversion, and multiple design tools have been developed for this topology, including controllers, regulators, soft-switching techniques, etc. While many tools are available for designing this converter, techniques for accurately determining power lasses in the inverter MOSFETs of the topology based on time-domain analysis have not been fully explored yet. Precise power loss estimation is fundamental to determine the thermal behavior of the switches before the converter is built, which accelerates and optimizes the thermal management design process. In addition, accurate methods of estimating conduction losses, which are dominant in this topology, switching losses, and body diode losses are lacking in the literature. This paper proposes a method for enhancing power loss estimation in LW inverter MOSFETs based on time-domain analysis of the converter. Moreover, a detailed characterization of MOSFET's conduction losses (P-cond), switching losses (P-sw), and body diode losses (P-diode), including the effects of different parameters such as gate-source voltage (V-GS), junction temperature (T-j) drain current (I-D), and drain-source voltage (V-DS), is presented, which can further improve power loss assessment in this topology. The developed method based on time interval analysis replaces the simplistic first-harmonic approximation (FHA), which allows for improved power lass calculations. Further improvement is obtained with the detailed characterization of the switching device. As verified by simulation and experimental results, the proposed estimation tool provides a significant boost in accuracy for power loss determination when compared to the existing method for power loss estimation using FHA.