Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

被引：43

作者：

Higurashi, Eiji ^{[1
]}

Okumura, Ken ^{[2
]}

Kunimune, Yutaka ^{[2
]}

Suga, Tadatomo ^{[2
]}

Hagiwara, Kei ^{[3
]}

机构：

[1] Univ Tokyo, Dept Precis Engn, Tokyo 1138656, Japan

[2] Univ Tokyo, Tokyo 1138656, Japan

[3] NHK Sci & Technol Res Labs, Tokyo 1578510, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2017年 / E100C卷 / 02期

关键词：

heterogeneous integration; room-temperature bonding; surface-activated bonding; Au-Au bonding;

D O I：

10.1587/transele.E100.C.156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wafers with smooth Au thin films (rms surface roughness: < 0.5 nm, thickness: < 50 nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.

引用

收藏

页码：156 / 160

页数：5

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