Tunneling spectroscopy of magnetic tunnel junctions: Comparison between CoFeB/MgO/CoFeB and CoFeB/Al-O/CoFeB

被引：8

作者：

Mizuguchi, M ^{[1
]}

Hamada, Y

Matsumoto, R

Nishioka, S

Maehara, H

Tsunekawa, K

Djayaprawira, DD

Watanabe, N

Nagahama, T

Fukushima, A

Kubota, H

Yuasa, S

Shiraishi, M

Suzuki, Y

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Mat Engn Sci, Osaka 5608531, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Canon ANELVA Corp, Electron Device Equipment Div, Tokyo 1838508, Japan

[4] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2171961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling spectroscopy measurements of magnetic tunneling junctions including two different barrier layers were performed. Intense dips at bias voltages of +/- 0.3 V were observed in second derivative conductance spectra only for a magnetic tunneling junction with a MgO barrier. It was concluded that the electronic structure of the MgO barrier has significant influence on the tunneling process of electrons through magnetic tunnel junctions. (C) 2006 American Institute of Physics.

引用

页数：3

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