Flame Detection by a β-Ga2O3-Based Sensor

被引：172

作者：

Oshima, Takayoshi ^{[1
]}

Okuno, Takeya ^{[1
]}

Arai, Naoki ^{[2
]}

Suzuki, Norihito ^{[2
]}

Hino, Harumichi ^{[2
]}

Fujita, Shizuo ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Nippon Light Met Co Ltd, Shizuoka 4213291, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 01期

关键词：

THIN-FILM GROWTH; SINGLE-CRYSTAL; BLIND;

D O I：

10.1143/JJAP.48.011605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An oxide semiconductor of beta-Ga2O3 has a natural solar-blind sensitivity due to its large bandgap of 4.8 eV. To evaluate its potential, a flame detector was fabricated using its conductive single crystal substrate applying a simple method without epitaxy and vacuum processes. The structure is a poly(3,4-ethylene dioxythiophene) complex with polystyrene sulfonic acid (PEDOT-PSS) Schottky contact/a semi-insulating layer of beta-Ga2O3/n-type region of beta-Ga2O3/an In ohmic contact. The spectral response of the detector exhibited a large 250-to-300-nm rejection ratio of 1.5 x 10(4) and an external quantum efficiency of 18% at 250 nm. The device successfully detected a flame by distinguishing 1.5nW/cm(2) solar-blind light from the flame under a strong fluorescent lamp illumination without any visible-cut filters. This result encourages the fabrication of practical beta-Ga2O3-based flame detectors. (c) 2009 The Japan Society of Applied Physics

引用

页数：7

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