Effect of Bias Voltage on Characteristics of Multilayer Si-DLC Film Coated on AA6061 Aluminum Alloy

被引:12
作者
Fayed, Saad M. [1 ,2 ]
Chen, Dongxu [1 ]
Li, Shengli [1 ]
Zhou, Yanwen [1 ]
Wang, Hongbin [1 ]
机构
[1] Univ Sci & Technol Liaoning, Sch Mat & Met, Anshan 114051, Peoples R China
[2] Al Azhar Univ, Fac Engn, Cairo 11371, Egypt
基金
中国国家自然科学基金;
关键词
bias voltage; corrosion behavior; diamond-like carbon (DLC); multilayer si-DLC film; mechanical properties; plasma-enhanced chemical vapor deposition (PECVD); DIAMOND-LIKE-CARBON; WEAR BEHAVIOR; CORROSION BEHAVIOR; COATINGS; PERFORMANCE; FRICTION; MICROSTRUCTURE; SPECTROSCOPY; DEPOSITION; ADHESION;
D O I
10.1007/s11665-020-05397-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The multilayer Si-DLC films have been deposited on AA6061 aluminum alloy using a mesh hollow cathode plasma-enhanced chemical vapor deposition technique from acetylene and silane precursor gas at temperature 373 K. Low magnification electron microscopes, Raman spectroscopy, and Fourier transform infrared spectroscopy were employed for characterizing the coating film structure. The MFT-4000 scratch tester, G200 nano-indentation tester, and MS-T3001 tribology tester were utilized to evaluate the adhesion strength, mechanical properties, and friction coefficient. Potentiodynamic polarization and potentiostatic techniques were used to study the multilayer Si-DLC films electrochemical behavior in harsh solution 3.5 wt.% NaCl. The findings revealed that the increase in bias voltage to - 300 V led to the adhesion strength, hardness, elastic modulus, and friction coefficient around 18N, 9.89 GPa, 85.57 GPa, and 0.17, respectively. The polarization results showed a decrease in corrosion current density, increased polarization resistance, and decreased passive current almost 1.28x10(-10) A/cm(-2), 5.26x10(9) omega cm(2), and 24.3 nA cm(-2), respectively. The findings are ascribed to reduce the internal stress and increase the overall content of sp(3) bonds in the film. Moreover, the Si-doped DLC film forms a passive layer from SiOx at the film/solution interface to impede the charge transfer.
引用
收藏
页码:743 / 759
页数:17
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