Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

被引：26

作者：

Alchaar, P. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Hoglund, L. ^{[2
]}

Naureen, S. ^{[2
]}

Christol, P. ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, IES, F-34000 Montpellier, France

[2] IRnova AB, Electrum 236 C5, SE-16440 Kista, Sweden

来源：

AIP ADVANCES | 2019年 / 9卷 / 05期

关键词：

MODEL;

D O I：

10.1063/1.5094703

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 mu m at 80K measured by photoluminescence and spectral response. The dark current density was 8.4x 10(-4) A/cm(-2) at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance. (c) 2019 Author(s).

引用

页数：8

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