Observation of New Isoelectronic Trap Luminescence in Nitrogen δ-Doped GaP

被引:0
作者
Ikezawa, Michio [1 ]
Sakuma, Yoshiki [2 ]
Watanabe, Masato [1 ]
Masumoto, Yasuaki [1 ]
机构
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
CENTERS; PAIRS;
D O I
10.1143/JJAP.48.04C158
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single isoelectronic traps in nitrogen delta-doped GaP were studied by micro-photoluminescence spectroscopy. A new luminescence peak was found at an energy between those of NN(3) and NN(4). The fine structure and polarization dependence of this peak were measured. The peak was assigned to a three-nitrogen cluster because the number of this center is proportional to the cube of nitrogen density. (C) 2009 The Japan Society of Applied Physics
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页数:3
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