Observation of New Isoelectronic Trap Luminescence in Nitrogen δ-Doped GaP

被引：0

作者：

Ikezawa, Michio ^{[1
]}

Sakuma, Yoshiki ^{[2
]}

Watanabe, Masato ^{[1
]}

Masumoto, Yasuaki ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

CENTERS; PAIRS;

D O I：

10.1143/JJAP.48.04C158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single isoelectronic traps in nitrogen delta-doped GaP were studied by micro-photoluminescence spectroscopy. A new luminescence peak was found at an energy between those of NN(3) and NN(4). The fine structure and polarization dependence of this peak were measured. The peak was assigned to a three-nitrogen cluster because the number of this center is proportional to the cube of nitrogen density. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 13 条

[1] Photon antibunching in the fluorescence of individual color centers in diamond [J].

Brouri, R ;

Beveratos, A ;

Poizat, JP ;

Grangier, P .

OPTICS LETTERS, 2000, 25 (17) :1294-1296

[2] Optical spectroscopy of single impurity centers in semiconductors [J].

Francoeur, S ;

Klem, JF ;

Mascarenhas, A .

PHYSICAL REVIEW LETTERS, 2004, 93 (06) :067403-1

[3] NN2 TRAP IN GAP - A REEXAMINATION [J].

GIL, B ;

MARIETTE, H .

PHYSICAL REVIEW B, 1987, 35 (15) :7999-8004

[4] Single photon emission from individual nitrogen pairs in GaP [J].

Ikezawa, Mi'chio ;

Sakuma, Yoshiki ;

Masumoto, Yasuaki .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L871-L873

[5] Single NN pair luminescence and single photon generation in nitrogen δ-cloped GaP [J].

Ikezawa, Michio ;

Sakuma, Yoshiki ;

Watanabe, Masato ;

Masumoto, Yasuaki .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 1, 2009, 6 (01) :362-+

[6] Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution [J].

Karaiskaj, D. ;

Mascarenhas, A. ;

Klem, J. F. ;

Volz, K. ;

Stolz, W. ;

Adamcyk, M. ;

Tiedje, T. .

PHYSICAL REVIEW B, 2007, 76 (12)

[7] Theory of electronic structure evolution in GaAsN and GaPN alloys [J].

Kent, PRC ;

Zunger, A .

PHYSICAL REVIEW B, 2001, 64 (11)

[8] Stable solid-state source of single photons [J].

Kurtsiefer, C ;

Mayer, S ;

Zarda, P ;

Weinfurter, H .

PHYSICAL REVIEW LETTERS, 2000, 85 (02) :290-293

[9] PICOSECOND SPECTROSCOPY IN III-V COMPOUNDS AND ALLOY SEMICONDUCTORS [J].

MARIETTE, H .

PHYSICA B & C, 1987, 146 (1-2) :286-303

[10] Time-resolved photoluminescence spectroscopy of individual Te impurity centers in ZnSe [J].

Muller, A ;

Bianucci, P ;

Piermarocchi, C ;

Fornari, M ;

Robin, IC ;

André, R ;

Shih, CK .

PHYSICAL REVIEW B, 2006, 73 (08)

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