Temperature-dependent AC conductivity and dielectric and impedance properties of ternary In-Te-Se nanocomposite thin films
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作者:
Mannu, Pandian
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Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Mannu, Pandian
[1
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Palanisamy, Matheswaran
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Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Palanisamy, Matheswaran
[1
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Bangaru, Gokul
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Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Bangaru, Gokul
[1
]
Ramakrishnan, Sathyamoorthy
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Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Ramakrishnan, Sathyamoorthy
[1
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Kandasami, Asokan
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Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Kandasami, Asokan
[2
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Kumar, Pawan
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Govt Coll, Dept Phys, Bhiwani 127021, Haryana, IndiaKongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
Kumar, Pawan
[3
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机构:
[1] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
[3] Govt Coll, Dept Phys, Bhiwani 127021, Haryana, India
The temperature- and frequency-dependent AC conductivity and dielectric and impedance properties of thermally evaporated ternary In-Te-Se nanocomposite thin films were measured in the temperature range from 100 to 300K with the frequency range of 20kHz-2MHz. The measured dielectric constant (epsilon), loss tangent (tan), and the ac electrical conductivity (sigma(ac)) values are considerably sensitive to the frequency and temperature. The variations in epsilon, epsilon and tan characteristics confirm the interfacial polarization. The values of C and epsilon decrease with frequency, while sigma(ac) increases with both temperature and frequency. The estimated activation energy is found to decrease with increase in temperature. Further, the frequency dependence real (Z) and imaginary parts (Z) of the impedance spectra of the sample depend on the dielectric relaxation process. The Nyquist plot shows that the radius of the semicircular arc decreases with temperature and reveals a temperature-dependent relaxation process. The mechanism responsible for thermally assisted AC conduction can be due to the electronic hopping of charge carriers.
机构:
Shivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India
Salunkhe, Manauti
Pawar, Nita
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Shivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India
Pawar, Nita
Patil, P. S.
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Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India
Patil, P. S.
Bhosale, P. N.
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Shivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, IndiaShivaji Univ, Dept Chem, Mat Res Lab, Kolhapur 416004, Maharashtra, India
机构:
Indian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, India
Maulana Abul Kalam Azad Univ Technol, Dept Forens Sci & Tech, Kolkata, W Bengal, IndiaIndian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, India
Samanta, Subhashis
Paramanik, Brijmohan
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Indian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, IndiaIndian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, India
Paramanik, Brijmohan
Das, Debajyoti
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Indian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, IndiaIndian Assoc Cultivat Sci, Energy Res Unit, Sch Mat Sci, Kolkata 700032, India
机构:
East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Guo, S.
Huang, T.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Huang, T.
Xu, L. P.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Xu, L. P.
Shi, K.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Shi, K.
Zhang, J. Z.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Zhang, J. Z.
Ji, X. L.
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Ji, X. L.
Hu, Z. G.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Hu, Z. G.
Wu, L. C.
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Wu, L. C.
Song, Z. T.
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
Song, Z. T.
Chu, J. H.
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East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China