Morphological and compositional changes in the SiO2/SiC interfacial layer induced by thermal annealing of different temperature

被引：0

作者：

Zhong, Zhiqin ^{[1
]}

Zheng, Luda ^{[1
]}

Wang, Shuya ^{[1
]}

Dai, Liping ^{[1
]}

Zhang, Guojun ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

BIOTECHNOLOGY, CHEMICAL AND MATERIALS ENGINEERING III, PTS 1 AND 2 | 2014年 / 884-885卷

关键词：

SiO2/4H-SiC interface; Annealed in Ar; Scan electron microscope; Energy dispersive spectrometer; SILICON-CARBIDE; SPECTROSCOPY; OXIDATION; SURFACE; OXIDE; WET;

D O I：

10.4028/www.scientific.net/AMR.884-885.304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors have systematically investigated the effects of different annealing temperatures in Ar atmosphere on the SiO2/4H-SiC interfaces by scan electron microscope (SEM) and energy dispersive spectrometer (EDS). Results show that the annealing temperatures are strongly correlated with the morphological and compositional changes of SiO2/4H-SiC interface. Annealing at 600 degrees C can significantly improve the quality of SiO2/4H-SiC interface. However, the sample annealed at 350 degrees C and 900 degrees C displays some particles. The reason for such improvement in the quality of the SiO2/4H-SiC interface after moderate temperature annealing at 600 degrees C can be explained by the formation and consumption of carbon clusters and silicon oxycarbides during annealing.

引用

页码：304 / 307

页数：4

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