Spin-charge conversion in InSe bilayers

被引：16
|
作者：
Zhou, Ma [1 ,2 ]
Zhang, Dong [1 ,2 ]
Yu, Shengbin [1 ,2 ]
Huang, Zhihan [1 ,2 ]
Chen, Yingda [1 ,2 ]
Yang, Wen [3 ]
Chang, Kai [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[3] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
来源：
PHYSICAL REVIEW B | 2019年 / 99卷 / 15期
基金：
国家重点研发计划;
关键词：
INDIUM SELENIDE; BAND-STRUCTURE; CONDUCTION; EFFICIENT; ELECTRONS; MOBILITY; GAN;
D O I：
10.1103/PhysRevB.99.155402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We find that the bilayer InSe possesses an intrinsic Rashba spin-orbit coupling and hence a spin-charge conversion effect due to the breaking of mirror symmetry. The interplay between the Rashba spin-orbit coupling and the nonparabolic Mexican hat dispersion leads to an interesting intraband Lifshitz transition and strongly amplifies the spin-charge conductivity, making it larger than that in conventional two-dimensional electron gas formed at oxide interfaces. This highlights bilayer InSe as a strong candidate for next-generation spintronic devices.
引用
收藏
页数：9
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