Tunneling anisotropic magnetoresistance:: A spin-valve-like tunnel magnetoresistance using a single magnetic layer -: art. no. 117203

被引：339

作者：

Gould, C ^{[1
]}

Rüster, C

Jungwirth, T

Girgis, E

Schott, GM

Giraud, R

Brunner, K

Schmidt, G

Molenkamp, LW

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[2] Inst Phys ASCR, Prague 16253 6, Czech Republic

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Univ Texas, Dept Phys, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.93.117203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.

引用

页码：117203 / 1

页数：4

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