Oxidation improvement of field electron emission from diamond nanomaterials

被引:2
作者
Karabutov, AV
Gordeev, SK
Ralchenko, VG
Korchagina, SB
Maslakov, KI
Dementjev, AP
机构
[1] Inst Gen Phys, Moscow 119991, Russia
[2] Cent Res Inst Mat, St Petersburg 191014, Russia
[3] RRC, Kurchatov Inst, IRTM, Moscow 123182, Russia
关键词
field electron emission; carbon; diamond; nanocomposite;
D O I
10.1002/sia.1713
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Porous diamond/sp(2)-bonded carbon nanocomposites were studied to determine how their field electron emission properties and electrical conductivity depend on composition and post-growth treatment. It was found that a treatment enriching the nanocomposites with oxygen could significantly improve the field emission from the diamond samples. The oxidized composites exhibited lower emission threshold fields (E-th = 1-2 V mum(-1) compared with E-th = 4-6 V mum(-1) for non-oxidized samples) and improved emission uniformity (the number of emission sites per unit area). The composites with low sp(2)-bonded carbon content, i.e. the more porous samples, typically show better results. The structure of the samples was studied using a C KVV Auger spectrometer, with x-ray excitation of Auger emission. Possible reasons for the emission improvement by oxidation in this two-phase carbon system are discussed. Copyright (C) 2004 John Wiley Sons, Ltd.
引用
收藏
页码:455 / 460
页数:6
相关论文
共 20 条
[1]   PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION [J].
BANDIS, C ;
PATE, BB .
PHYSICAL REVIEW B, 1995, 52 (16) :12056-12071
[2]   Electron emission from metal-diamond (100), (111) and (110) interfaces [J].
Baumann, PK ;
Nemanich, RJ .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :612-619
[3]   Low-threshold electron emission from diamond [J].
Cui, JB ;
Ristein, J ;
Ley, L .
PHYSICAL REVIEW B, 1999, 60 (23) :16135-16142
[4]  
Dementjev AP, 2002, NEW DIAM FRONT C TEC, V12, P11
[5]   DIAMOND COLD-CATHODE [J].
GEIS, MW ;
EFREMOW, NN ;
WOODHOUSE, JD ;
MCALEESE, MD ;
MARCHYWKA, M ;
SOCKER, DG ;
HOCHEDEZ, JF .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459
[6]  
Gordeev SK, 1997, NATO ASI 3 HIGH TECH, V38, P1
[7]  
GORDEEV SK, 2002, P 2 INT S FULL FULL
[8]   QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].
HIMPSEL, FJ ;
KNAPP, JA ;
VANVECHTEN, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 20 (02) :624-627
[9]  
Karabutov A. V., 1999, Journal of Wide Bandgap Materials, V7, P68, DOI 10.1106/D0WE-86B2-YW0J-8WKQ
[10]   Grain boundary field electron emission from CVD diamond films [J].
Karabutov, AV ;
Frolov, VD ;
Pimenov, SM ;
Konov, VI .
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :763-767