Half-metallic diluted antiferromagnetic semiconductors

被引：96

作者：

Akai, H. ^{[1
]}

Ogura, M. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.97.026401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs-(V, Co) and (Fe, Cr)-are discussed.

引用

页数：4

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