Low-Temperature Monolithic Encapsulation Using Porous-Alumina Shell Anodized on Chip

被引:19
作者
He, Rihui [1 ]
Kim, Chang-Jin [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
关键词
Integrated packaging; low temperature; monolithic encapsulation; porous alumina; RF MEMS packaging; thin-film encapsulation; LOAD-DEFLECTION; MEMS; FABRICATION; SILICON; FILMS; MEMBRANES;
D O I
10.1109/JMEMS.2009.2017088
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thin-film encapsulation process, featuring low-temperature steps, hermetic sealing (preliminary), and RF-compatible shell, is reported. Uniquely attractive as compared with the existing MEMS packaging approaches is its capability to monolithically package metal microstructures inside a microcavity on chip in one continuous surface-micromachining process. The key for this process is a technique to fabricate a large freestanding porous membrane on chip by postdeposition anodization of thin-film aluminum at room temperature. The porous-alumina membrane allows for the diffusion of gas or liquid etchants through the nanopores to etch away the sacrificial material underneath, freeing the movable microstructures encapsulated inside the cavity. To seal the package, a thin film is deposited over the alumina shell whose nanoscale pores of a high aspect ratio (> 30) do not allow any detectable penetration of the sealing material. The low-temperature (< 300 degrees C) encapsulation process produced a low-pressure seal (8 torr), monitored by a Pirani pressure gauge that also represents an encapsulated freestanding metal microstructure in the cavity. The thin-film package demonstrated a considerably low RF insertion loss of less than 0.1 dB up to 40 GHz. [2007-0267]
引用
收藏
页码:588 / 596
页数:9
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